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New Advances in Selective Epitaxial Diamond NTC Thermistors: A Promising Direction for Extreme-Environment Temperature Sensing

published on 2026-05-15

With the rapid development of advanced manufacturing, aerospace systems, deep-earth energy exploration, and high-power electronics, temperature sensors are increasingly required to operate reliably under extremely harsh conditions. In environments involving high temperature, high pressure, corrosion, and radiation exposure, sensors must deliver not only high sensitivity, but also long-term stability and reliability.
Negative temperature coefficient (NTC) thermistors have long been widely used in industrial control systems, automotive electronics, battery management systems, and temperature compensation circuits due to their simple structure, fast response, and high sensitivity. However, conventional metal-oxide-based NTC thermistors are facing growing limitations in demanding applications.
Against this backdrop, diamond, as an ultra-wide-bandgap semiconductor material, is emerging as a highly promising platform for next-generation high-reliability temperature sensing technologies.
 

Challenges Facing Conventional NTC Thermistors

Most commercially available NTC thermistors are based on metal oxide ceramics or nanocomposite materials, typically involving Mn-, Co-, or Ni-based oxide systems. Although these devices benefit from mature manufacturing processes and relatively low cost, they still exhibit significant limitations in harsh operating environments.
Challenge Limitation
Poor high-temperature stability Performance drift during long-term operation
Limited corrosion resistance Reliability degradation in acidic, humid, or chemically aggressive environments
Sensitivity degradation Reduced response after thermal aging
Narrow operating temperature range Difficult to meet ultra-high-temperature requirements
Limited service lifetime Higher failure rates under extreme conditions
For example, aerospace engines, deep-well drilling systems, and nuclear industrial equipment often require sensors capable of stable operation at temperatures of several hundred degrees Celsius or higher. Conventional NTC materials struggle to maintain long-term reliability under such conditions.
As a result, researchers have increasingly focused on identifying new sensing materials suitable for extreme environments.
 

Why Diamond Is an Ideal Candidate

Diamond is not only the hardest known natural material, but also one of the most outstanding ultra-wide-bandgap semiconductors.
Its key material advantages include:
Material Property Typical Value Technical Advantage
Bandgap ~5.5 eV Enables high-temperature electronic operation
Thermal conductivity >2000 W/m·K Rapid thermal response and efficient heat dissipation
Breakdown field strength ~10 MV/cm Suitable for high-power systems
Chemical stability Extremely high Excellent corrosion and oxidation resistance
Mechanical hardness Extremely high Suitable for harsh environments
Radiation resistance Excellent Ideal for aerospace and nuclear applications
These properties make diamond highly attractive for applications such as:
  •    • High-temperature temperature sensors
  •    • High-power electronic devices
  •    • Aerospace electronic systems
  •    • Deep-well and geothermal exploration
  •    • MEMS devices for harsh environments
  •    • Radiation-resistant electronics for nuclear applications
In recent years, researchers have explored diamond NTC thermistors based on boron-doped diamond and grain-boundary-engineered polycrystalline diamond. However, several critical challenges remain:
  •    • Unclear conduction mechanisms
  •    • Poor device consistency
  •    • High fabrication complexity
  •    • Limited compatibility with large-scale manufacturing
Consequently, developing diamond NTC thermistors that combine high performance, reliability, and scalability has become an important research objective.
 

Breakthrough in Selective Epitaxial Diamond NTC Devices

Recently, a research team led by Ao Jinping from the School of Integrated Circuits at Jiangnan University, in collaboration with researchers from Xi’an Jiaotong University, published a study titled “Investigation of diamond NTC thermistors based on selective epitaxial method” in Materials Letters.
The study presents a novel NTC thermistor based on selectively epitaxial diamond thin films and successfully demonstrates stable negative temperature coefficient behavior without intentional doping.
This achievement provides a new technological pathway for the development of next-generation diamond temperature sensors.
 

An Unexpected Discovery Led to a New Concept

The research team had originally been investigating selectively epitaxial diamond for ultraviolet photodetectors and Schottky barrier diodes.
During these studies, the researchers unexpectedly observed that selectively grown diamond films exhibited measurable conductivity at room temperature, along with distinct NTC behavior.
This finding suggested that stable diamond thermistors could potentially be realized without conventional doping processes.
The discovery not only simplifies device fabrication, but also improves compatibility with scalable manufacturing technologies.
 

Figure 1. (a) Schematic illustration of the NTC device and (b) optical image of the fabricated device.
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Figure 2. Scanning electron microscopy (SEM) images:
(a) enlarged view of the device morphology;
(b) voids on the tungsten (W) electrode stripes;
(c) etched surface of the tungsten mask and selectively epitaxial layer.
(d) Raman spectrum of the selectively epitaxial layer between the tungsten electrode stripes.
 

Innovative Device Fabrication Process

The researchers developed a fabrication route with strong process compatibility and manufacturing potential.

1. Buffer Layer Formation

A thin buffer layer was first grown on a type-Ib single-crystal diamond substrate to improve the quality of subsequent epitaxial growth.

2. Interdigitated Electrode Fabrication

Interdigitated tungsten (W) electrodes were fabricated using photolithography and magnetron sputtering techniques.
The interdigitated structure enhances the device response to temperature variations.

3. Selective Epitaxial Growth

Selective epitaxial diamond growth was carried out using a microwave plasma chemical vapor deposition (MPCVD) system, forming an approximately 200 nm thick active layer.

4. Oxygen-Terminated Surface Treatment

Ultraviolet ozone treatment was applied to achieve oxygen surface termination, further improving the electrical performance and operational stability of the device.
 

Key Process Innovation: In-Situ Formation of Ohmic Contacts

One of the most important innovations of this work is that stable ohmic contacts are formed directly during the selective epitaxial growth process.
During growth, the tungsten mask reacts in situ with the diamond surface, eliminating the need for additional metal deposition steps.
Compared with conventional fabrication approaches, this method offers several advantages:
Conventional Process Proposed Process
Requires additional metal deposition Ohmic contacts formed in situ
More complex fabrication flow Simplified process
Limited contact consistency Improved contact stability
Moderate scalability Better compatibility with mass production
This process innovation significantly enhances the commercial potential of the technology.
 

Device Performance

The fabricated device demonstrated stable operation across an ultra-wide temperature range.
Parameter Performance
Operating temperature range 150–723 K
High-sensitivity operating region 150–477 K
Active layer thickness ~200 nm
Electrode material Tungsten (W)
Device type Undoped NTC thermistor
Within the key operating range of 150–477 K, the device exhibited:
  •    • High temperature sensitivity
  •    • Fast transient response
  •    • Excellent repeatability
  •    •Stable long-term operation
In addition, the device achieved significantly better low-temperature B-value performance compared with conventional boron-doped diamond thermistors.
 

Conduction Mechanism Systematically Clarified

The origin of conductivity in selectively epitaxial diamond films has long remained unclear.
Through systematic analysis, the researchers demonstrated that the conductivity primarily originates from tungsten-related impurities introduced during the selective epitaxial growth process.
This conclusion is highly significant because it:
  •    •Clarifies the physical origin of conduction
  •    •Provides theoretical guidance for process optimization
  •    •Improves device reproducibility
  •    •Supports the development of undoped diamond electronic devices
The findings may also provide valuable insights for future diamond-based sensors and electronic devices.
 

Future Prospects for Diamond NTC Thermistors

As selective epitaxial growth technology continues to mature, diamond NTC thermistors are expected to play an increasingly important role in several advanced application areas.

Aerospace Systems

Temperature monitoring for engines, hypersonic vehicles, and satellite electronics.

Deep-Well and Energy Exploration

Real-time sensing in high-temperature, high-pressure underground environments.

High-Power Electronics

Thermal management and reliability monitoring of power modules.

Harsh Industrial Environments

Long-term operation under corrosive and radiation-rich conditions.
Overall, this work not only expands the application scope of diamond electronic devices, but also advances the development of next-generation extreme-environment sensing technologies.
 

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Product Portfolio

Typical Applications

Product Type Main Applications
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Polycrystalline diamond substrates Thermal management materials, cutting tools, wear-resistant components
Diamond thin films MEMS devices, temperature sensors, optical windows

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  •    •Thickness customization
  •    •Size customization
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  •    •Epitaxy-grade specifications
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