At present, silicon carbide accelerates penetration in new energy, charging piles, rail transit and other fields. Moreover, due to its high-speed switching and low on-resistance characteristics, it can exhibit excellent electrical characteristics even under high temperature conditions, greatly reducing switching losses, making components smaller and lighter, more efficient in performance, and improving the overall reliability of the system.

JXT Technology Co.,Ltd. have been developing SiC wafers. Now JXT can offer 2inch, 4inch, 6inch, 8inch SiC wafers stably.

1.Properties

Band Gap(eV):3.26

Breakdown Electrical Field (MV/cm):3.1

Thermal Conductivity(W/cm.K):3.7-4.9

Thermal Expansion :4.7*10-6/k

Refractive Index :2.6767～2.6480

Saturation Drift Velocity(m/s):2.0×105

2. 8 inch 4H-N SiC wafers Specification

Diamater: 200±0.5mm

Thickness：500±25μm

Surface Orientation: Off-Axis：4°toward <11-20>±0.5°

Notch Orientation: [1-100]±1.0°

Resistivity: 0.015-0.028 Ω.cm

Si Face: CMP

C Face: MP

TTV≤ 15

Bow≤ 20

Wrap ≤ 20

LTV ≤ 20

3. Application

Silicon carbide wafers are used in photovoltaic inverter power supplies, new energy electric vehicles and charging piles, smart grids, high-frequency electric welding, rail transit, industrial control special power supplies, national defense and military industries, etc.